MJE / MJE NPN Silicon Power Transistors. These devices are designed for high-voltage, high-speed power switching inductive circuits where. Characteristics of the MJE bipolar transistor. Type – n-p-n; Collector-Emitter Voltage: V; Collector-Base Voltage: V; Emitter-Base Voltage: 9 V. Taiwan Semiconductor Bipolar Transistors – BJT are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for Taiwan.
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Are you a trading company or manufacturer9 A: China transistor nxp China nec transistor China a c transistor. Our company as a professional Electronic wholesaler for several years fast developing have already beening a famous trading corporation. New and Original IC transistor Prices quoted are correct at time of this quotation but may be subject to change after one week due to currency fluctuations and change to quantity ordered.
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