Full text of “IC Datasheet: EPROM” Jameco Part Number M NMOS Kbit (32Kb x 8) UV EPROM NOT FOR NEW DESIGN □ FAST. datasheet, pdf, data sheet, datasheet, data sheet, pdf, General NMOS K 32K x 8 UV EPROM Others with the same file for datasheet. (EPROM). The device is organized as 32K words by 8 bits (32K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin.
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The levels required forthe address and data inputs are TTL. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. The length of the Over-program Pulse varies from 2. Output Enable G is the output control and should be used to gate data to the output pins, inde- pendent of device selection. The associated transient voltage peaks eprpm be sup- pressed by complying with the two line output control and by properly selected decoupling ca- pacitors.
No license is granted by implication or otherwise under any patent or patent rights of STMicroeiectronics. The recommended erasure procedure for the M is exposure to short vyave ultraviolet light which has wavelength A.
Some lamps have a filter on their tubes which should be re- moved before erasure. Although only “Os” will be programmed, both “1 s” and “Os” can be present dztasheet the data eprok. Vcc must be applied simultaneously with or before Vpp and removed simultaneously or after Vpp. The M is in the programming mode when Vpp input is at 1 2.
Research shows that constant exposure to room level fluorescent lighting could erase a typical M in about 3 years, while it would take approximately 1 week to cause erasure when exposed to direct sunlight. Assuming that the addresses are stable, address access time tflivov is equal to the delay from E to output tELOv. It should be noted that sunlight and some type of fluorescent lamps have wavelengths in the A range.
These are stress ratings oniy and operation of the device at these or any other eporm above those indicated in the Operating sections of this specification is not implied. Standby Mode The M has a standby mode which reduces the maximum active power current from mA to 40mA. Except for E, all like inputs including G of the parallel M may be common. All other address lines must be held at Vil during Electronic Signature mode. F ceramic capacitor be used on every device between Vcc and Vss- This should be a high frequency capacitor of low inherent inductance and should be placed as close to the device as possible.
For further information on any aspect of this device, please contact STMicroelectronics Sales Office nearest to you. The erom of the transient current peaks is dependent on the capacitive and inductive loading of the device at the output.
Specifications mentioned in this publication are subject to change without notice. The bulk capacitor should be located near the power supply connection point. This mode is intended for use by programming equipment for the purpose of automatically matching the device to be programmed with its corresponding programming algorithm.
Program Verify A verify should be performed on the programmed bits to determine that they were correctly pro- grammed. A high level E input inhibits the other Ms from being programmed. When in the standby mode, the outputs are in a high impedance state, independent of the G input.
Datasheet pdf – K (32k x 8) Bit NMOS UV Erasable PROM – General Semiconductor
Data s available at the ojjtputs after the falling edge of G, assuming that E has been low and the ad- dresses have been stable for at least tAvav-tcLov. Except for the rating “Operating Temperature Range”, stresses above those datashet in the Table “Absolute Maximum Ratings” may cause permanent damage to the device.
Data is introduced by selectively programming “Os” into the desired bit locations. In addition, a 4.
Chip Enable E is the power control and should be used for device selection. Two identifier bytes may then be sequenced from the device outputs by toggling address line AO from Vil to Vih. Full text of ” IC Datasheet: When parallel programming several devices which share the common bus, Eprm should be lowered to Vcc 6V and the normal read mode used to exe- cute a program verify.
However, STMicroeiectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
27256 – 27256 256K EPROM Datasheet
The M should be placed within 2. The supply current, Ice, has three segments that are of interest to the system designer: The purpose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of RGB traces.
This ensures that all deselected memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device. The Fast Programming Algorithm utilizes two different pulse types: Programming reliability is also ensured as the incremental program margin of each byte is continually monitored to determine when it has been successfully programmed. This publication supersedes datasheef replaces all information previously supplied.
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