BUAF Transistor Datasheet pdf, BUAF Equivalent. Parameters and Characteristics. isc website: isc & iscsemi is registered trademark. 1 isc Silicon NPN Power Transistor. BUAF. DESCRIPTION. ·Collector-Emitter. BUAF STMicroelectronics Bipolar Transistors – BJT NPN Power Transistor datasheet, inventory, & pricing.

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BU508AF Datasheet

Search field Part name Part description. Getting started with eDesignSuite. The product information and the selection guides facilitate selection of the CDIL’s Discrete Semiconductor Device s best suited for application in your product s as per your requirement.


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Buy Direct Add to cart. Marketing proposal for customer feedback. Total Power Dissipation upto T. Product is in volume production only to support customers ongoing production.

STMicroelectronics BUAF – PDF Datasheet – Transistors (NPN/PNP) In Stock |

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Product is in design feasibility stage. Product is under characterization.

BU508AF Datasheet, Equivalent, Cross Reference Search

Media Subscription Media Contacts. Product is in design stage Target: Continental Device India Limited. Distributor Name Region Stock Min. IoT for Smart Things. Base Emitter Saturation Voltage. All diminsions in mm. No commitment taken to design or produce NRND: It is recommended that you completely review our Data Sheet s so as to confirm that the Device s meet functionality parameters for your application.

Product is datasehet volume production Evaluation: The BUAF is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage.


Collector Cut off Current. Collector Emitter Saturation Voltage.

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Collector Emitter Sustaining Voltage. No availability reported, please contact our Sales office.