BUK455 DATASHEET PDF

Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Accessories supplied. BUKA Powermos Transistor: 60v, 41a. N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in. Details, datasheet, quote on part number: BUKA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK Drain-source voltage Drain current (DC).

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BUKA Hoja de datos ( Datasheet PDF ) – PowerMOS transistor

Normalised continuous drain current. TOAB; pin 2 connected to mounting base. Normalised continuous drain current.

Typical reverse diode current. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Stress above one or more of the limiting values may cause permanent damage to the device.

BUK455600C DATASHEET

This data sheet contains target or goal specifications for product development. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

Typical turn-on gate-charge characteristics.

No liability will be dataseet by the publisher for any consequence of its use. Product specification This data sheet contains final product specifications. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.

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Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without adtasheet.

buk455-200a.pdf

TOAB; pin 2 connected to mounting base. Normalised avalanche energy rating.

Application information Where application information is given, it is advisory and does not form part of the specification. VDD August 5 Rev 1. Typical reverse diode current.

UNIT – – 1. August 7 Rev 1. August 6 Rev 1. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Typical capacitances, Ciss, Coss, Crss. These are stress ratings only and operation of the device at these or at any other conditions above bk455 given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

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BUK datasheet, BUK datasheets, manuals for BUK electornic semiconductor part

Typical turn-on gate-charge characteristics. Refer to mounting instructions for TO envelopes. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

Application information Where application information is given, it is advisory and does not form part of the specification. New Product Bik455 Product Index. August 7 Rev 1.

Stress above one buk4555 more of the limiting values may cause permanent damage to the device. Publication dztasheet does not convey nor imply any license under patent or other industrial or intellectual property rights. Refer to mounting instructions for TO envelopes.

Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

Normalised drain-source on-state resistance.