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Application information Where application information is given, it is advisory and does not form part of the specification.
BUK456-1000B MOSFET. Datasheet pdf. Equivalent
April 6 Rev 1. May 7 Rev 1. The datasheey presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable nuk456 may be changed without notice. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. Normalised drain-source on-state resistance.
Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. Exposure to limiting values for extended periods may affect device reliability.
Normalised drain-source on-state resistance. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. TOAB; pin 2 connected to mounting base. Stress above one or more of the limiting values may cause permanent damage to the device.
These datashest stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Normalised continuous drain current. UNIT – – 1. Product specification This data sheet contains bul456 product specifications.
These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Typical capacitances, Ciss, Coss, Crss.
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bui456 Stress above one or more of the limiting values may cause permanent damage to the device. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. UNIT – – 1. Exposure to limiting values for extended periods may affect device reliability.
No liability will be accepted by the publisher for any consequence of its use. No liability will be accepted by the publisher for any consequence of its use.
May 6 Rev 1. Application information Where application information is given, it is advisory and does not form part of the specification. Normalised continuous drain current. Typical reverse diode current.
Typical turn-on gate-charge characteristics. Typical capacitances, Ciss, Coss, Crss. Product specification This data sheet contains final product specifications.
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Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting datasheeet such improper use or sale. Refer to mounting instructions for TO envelopes. Typical turn-on gate-charge characteristics. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
BUK Datasheet(PDF) – NXP Semiconductors
Philips customers using or selling these products for use in datsaheet applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Typical reverse diode current. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide.
April 7 Rev 1. Publication thereof does not convey nor imply any license under patent or other industrial or datashest property rights.
Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.