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Just saying hello Started by MichaelaJoy Yesterday at 6: Adding an extra diode would really be silly here. I blame lack of coffee.

Some good simulations might tell what is best to do with a given application, and some prototype measurements would also help. Yes, place them on the drain and source of each mosfet.

Secondary usually is the reverse recovery, which can be longer than an external carefully located high speed diode. Place 18v zeners between the gate and source to eliminate transient high voltages and self-latching. I did all the schematics with some features like all inputs high impossible so no short but as i am a newb It dose say It has source to drain diode built in for inductive loads. I have doubts that it is a more practical way of doing with npn and pnp combo I also need to know where to place the flyback diode please.

As a quick example of an application that does not require an extra diode, consider a relay driver where the relay turns on and off once per hour. I need to build a h-bridge for my mobile breadboard aka hammerhead cause of its shape.

I’m sure many people think that’s why they are there, just from looking at the datasheets.

IRF511 Datasheet PDF

This site uses cookies to help personalise content, tailor your experience and to keep you logged in if you register. Was thinking single direction, even though you obviously said h-bridge.

But, why take the chance in blowing up your mosfets because you don’t want to use an extra diode that costs a few cents? Replacing a 4 pin leaded inductor with a 2 pin Started by gkmaia Yesterday at I’ve seen circuit where they place it between the drain and source of each transistor, will it do the job? Thank you evryone to had answered my questions so fast, electro-tech-online really is a great community.

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Place the freewheel diode as close to the motor as possible. If you look on any data sheet you will find that that particular diode has a rather high forward voltage, much higher than an external Schottky would have for example. On the other hand, a very high speed H bridge may benefit from adding extra diodes because doing that, if not anything else, moves some of the heat out of the transistor package and therefore keeps it cooler. Nope the man that quoted it on his web site is right it tells in the data sheet read it’s on the vatasheet page here a quote.

Potentiometer Questions Started by norbss Yesterday at Welcome to our site!

This helps reduce the ringing effect from the transistor turning on and off. It gets even worse if you are in an h-bridge configuration. A careful analysis has to be made and some prototype measurements would verify the need for any irf5511 diodes.

Also place a pF ceramic cap between the drain and source of all the mosfets. The problem is catasheet obviously geometry is involved and i dont have very advanced notions i am 14 after all and If you read the actual datasheets on the product, nowhere does it say the body diode should be used for inductive loads. Sorry, datssheet braindead on the diode. I’m sure they thought it could be used for that at some point, until they started finding failures using it that way.

Thank you if you post of course.

IRF511 Datasheet

The bottom line is that whether or not you can use the integral body diode depends on the application, in how much power that diode will have to dissipate. Hi, I can add a little information here Read these app notes from Datawheet Rectifier and Fairchild about mosfets Click here to register now. Electro Tech is an online community with overmembers who enjoy talking about and building electronic circuits, projects and gadgets. However, i have a geometry question that is burning irff511 lips but i only see my father in two days Media New media New comments Search media.


IRF Datasheet(PDF) – Inchange Semiconductor Company Limited

If the application can stand the extra loss in power and the device itself wont overheat, then there is no reason not to use the internal diode. On the other hand, if the device overheats or has to be used in high heat environment then it would probably not work well to use that internal diode.

Read the app notes. The integral body diode sees a irf511 spike once per hour that lasts probably 1ms or maybe even 10ms, but after that it has almost 60 minutes to cool back down. I actually designed converters for a company way back when and have viewed a multitude of other designs that were similar that were designed by other people that had a lot of knowledge in the field.

IRF MOSFET Datasheet pdf – Equivalent. Cross Reference Search

Forums New posts Search forums. You can easily use all NMOS fets, though you will need a bootstrap cap and diode on the high side drivers. Articles Top Articles Search resources. As a final note, we’d also have to look at the effect of the negative voltage on the drain when the diode conducts, which might force us to have to use a gate drive signal that actually goes a little negative rather than to zero as many designs do N-MOSFET application.